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FDG330P - High performance trench technology for extremely low R

FDG330P_8209063.PDF Datasheet

 
Part No. FDG330P
Description High performance trench technology for extremely low R

File Size 123.05K  /  2 Page  

Maker

TY Semiconductor Co., L...



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Part: FDG313N
Maker: FAI
Pack: SOT26
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Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5
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